Datasheet Details
| Part number | FDS8638 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 293.00 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDS8638_FairchildSemiconductor.pdf |
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Overview: FDS8638 N-Channel PowerTrench® MOSFET FDS8638 N-Channel PowerTrench® MOSFET 40 V, 18 A, 4.
| Part number | FDS8638 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 293.00 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDS8638_FairchildSemiconductor.pdf |
|
|
|
March 2009 Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.4 mΩ at VGS = 4.5 V, ID = 16 A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Applications Synchronous Rectifier Load Switch D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 3) (Note 1a) (Note 1b) Ratings 40 ±20 18 100 541 2.5 1 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) 25 (Note 1a) 50 °C/W Device Marking FDS8638 Device FDS8638 Package SO-8 Reel Size 13 “ Tape Width 12 mm Quantity 2500 units ©2009 Fairchild Semiconductor Corporation 1 FDS8638 Rev.C .fairchildsemi.
FDS8638 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 40 ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V On Characteristics VGS(th) ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Gate
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