FDS8638 Description
March 2009 Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.4 mΩ at VGS = 4.5 V, ID = 16 A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
FDS8638 Key Features
- Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A
- Max rDS(on) = 5.4 mΩ at VGS = 4.5 V, ID = 16 A
- High performance trench technology for extremely low rDS(on)
- 100% UIL Tested
- RoHS pliant