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FDS8812NZ - N-Channel MOSFET

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FDS8812NZ Product details

Description

Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 20A Max rDS(on) = 4.9mΩ at VGS = 4.5V, ID =18A HBM ESD protection level of 6.4KV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability RoHS compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.This device is

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