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FDS8812NZ Datasheet, Fairchild Semiconductor

FDS8812NZ Datasheet, Fairchild Semiconductor

FDS8812NZ

datasheet Download (Size : 469.83KB)

FDS8812NZ Datasheet

FDS8812NZ mosfet equivalent, n-channel mosfet.

FDS8812NZ

datasheet Download (Size : 469.83KB)

FDS8812NZ Datasheet

Features and benefits

General Description
* Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 20A
* Max rDS(on) = 4.9mΩ at VGS = 4.5V, ID =18A
* HBM ESD protection level of 6.4KV typical (n.

Application

common in Notebook Computers and Portable Battery Packs. D D D G D D D S SO-8 G D S S S Pin 1 S D S M.

Description


* Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 20A
* Max rDS(on) = 4.9mΩ at VGS = 4.5V, ID =18A
* HBM ESD protection level of 6.4KV typical (note 3)
* High performance trench technology for extremely low rDS(on)
* High power and curren.

Image gallery

FDS8812NZ Page 1 FDS8812NZ Page 2 FDS8812NZ Page 3

TAGS

FDS8812NZ
N-Channel
MOSFET
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

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