FDS8812NZ mosfet equivalent, n-channel mosfet.
General Description
* Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 20A
* Max rDS(on) = 4.9mΩ at VGS = 4.5V, ID =18A
* HBM ESD protection level of 6.4KV typical (n.
common in Notebook Computers and Portable Battery Packs.
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G
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SO-8
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Pin 1
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M.
* Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 20A
* Max rDS(on) = 4.9mΩ at VGS = 4.5V, ID =18A
* HBM ESD protection level of 6.4KV typical (note 3)
* High performance trench technology for extremely low rDS(on)
* High power and curren.
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