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FDS8812NZ Key Features

  • Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 20A
  • Max rDS(on) = 4.9mΩ at VGS = 4.5V, ID =18A
  • HBM ESD protection level of 6.4KV typical (note 3)
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability
  • RoHS pliant

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FDS8812NZ Description

„ Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 20A „ Max rDS(on) = 4.9mΩ at VGS = 4.5V, ID =18A „ HBM ESD protection level of 6.4KV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state...