FDS8842NZ Datasheet | Fairchild Semiconductor

FDS8842NZ N-Channel Power Trench® MOSFET N-Channel Power Trench® MOSFET February 2009 40 V, 14.9 A, 7.0 mΩ Features General Description - Max r DS(on) = 7.0 mΩ at VGS = 10 V, ID = 14.9 A - Max r DS(on) = 11.6 mΩ at VGS = 4.5 V, ID = 11.6 A - HBM ESD protection level of 4.4 k V typical(note 3) - High performance trench technology for extremely low r DS(on) and fast switching - High power and current handling capability - Termination is Lead-free and Ro HS pliant The FDS8842NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance. Applications - Synchronous Buck for Notebook Vcore and Server - Notebook Battery - Load Switch SO-8 Pin 1 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TA = 25 °C Power...