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FDS8842NZ - N-Channel MOSFET

General Description

Max rDS(on) = 7.0 mΩ at VGS = 10 V, ID = 14.9 A Max rDS(on) = 11.6 mΩ at VGS = 4.5 V, ID = 11.6 A HBM ESD protection level of 4.4 kV typical(note 3) High performance trench technology for extremely low rDS(on) and fast switching High power and curre

Key Features

  • General.

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FDS8842NZ N-Channel Power Trench® MOSFET FDS8842NZ N-Channel PowerTrench® MOSFET February 2009 40 V, 14.9 A, 7.0 mΩ Features General Description „ Max rDS(on) = 7.0 mΩ at VGS = 10 V, ID = 14.9 A „ Max rDS(on) = 11.6 mΩ at VGS = 4.5 V, ID = 11.6 A „ HBM ESD protection level of 4.4 kV typical(note 3) „ High performance trench technology for extremely low rDS(on) and fast switching „ High power and current handling capability „ Termination is Lead-free and RoHS Compliant The FDS8842NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.