Datasheet Details
| Part number | FDS8842NZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 316.27 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDS8842NZ_FairchildSemiconductor.pdf |
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Overview: FDS8842NZ N-Channel Power Trench® MOSFET FDS8842NZ N-Channel PowerTrench® MOSFET February 2009 40 V, 14.9 A, 7.
| Part number | FDS8842NZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 316.27 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDS8842NZ_FairchildSemiconductor.pdf |
|
|
|
Max rDS(on) = 7.0 mΩ at VGS = 10 V, ID = 14.9 A Max rDS(on) = 11.6 mΩ at VGS = 4.5 V, ID = 11.6 A HBM ESD protection level of 4.4 kV typical(note 3) High performance trench technology for extremely low rDS(on) and fast switching High power and current handling capability Termination is Lead-free and RoHS Compliant The FDS8842NZ has been designed to minimize losses in power conversion application.
Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
Applications Synchronous Buck for Notebook Vcore and Server Notebook Battery Load Switch D D D D D G D S SO-8 G D S S S D S Pin 1 S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 4) (Note 1a) (Note 1b) Ratings 40 ±20 14.9 93 253 2.5 1.0 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) 25 (Note 1a) 50 °C/W Device Marking FDS8842NZ Device FDS8842NZ Package SO8 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units ©2009 Fairchild Semiconductor Corporation 1 FDS8842NZ Rev.C www.fairchildsemi.com FDS8842NZ N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Cu
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