FDS8842NZ datasheet, mosfet equivalent, Fairchild Semiconductor

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FDS8842NZ Features and benefits

General Description
* Max rDS(on) = 7.0 mΩ at VGS = 10 V, ID = 14.9 A
* Max rDS(on) = 11.6 mΩ at VGS = 4.5 V, ID = 11.6 A
* HBM ESD protection level of 4.4 .

FDS8842NZ Application

* Synchronous Buck for Notebook Vcore and Server
* Notebook Battery
* Load Switch D D D D D G D S SO-8.

FDS8842NZ Description

* Max rDS(on) = 7.0 mΩ at VGS = 10 V, ID = 14.9 A
* Max rDS(on) = 11.6 mΩ at VGS = 4.5 V, ID = 11.6 A
* HBM ESD protection level of 4.4 kV typical(note 3)
* High performance trench technology for extremely low rDS(on) and fast switch.

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