Datasheet4U Logo Datasheet4U.com

FDS9412 - Single N-Channel Enhancement Mode Field Effect Transistor

Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

  • 7.9 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 36 mΩ @ VGS = 4.5 V.
  • Very low gate charge.
  • High switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability in a widely used surface mount package. D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed T.

📥 Download Datasheet

Datasheet preview – FDS9412

📁 Similar Datasheet

  • FDS9400A - P-Channel 30V MOSFET (VBsemi)
  • FDS9400A-NL - P-Channel 30V MOSFET (VBsemi)
  • FDS9431A - P-Channel MOSFET (ON Semiconductor)
  • FDS9435A - 30V P-Channel PowerTrench MOSFET (ON Semiconductor)
  • FDS9926A - Dual N-Channel MOSFET (ON Semiconductor)
  • FDS9933A - Dual P-Channel MOSFET (onsemi)
  • FDS9945-NL - Dual N-Channel MOSFET (VBsemi)
  • FDS010 - Photodiodes (Thorlabs)
  • FDS100BA60 - DIODE MODULE (SanRex Corporation)
  • FDS100CA100 - FAST RECOVERY DIODE MODULE (SanRex Corporation)
Other Datasheets by Fairchild Semiconductor
  • FDS9400A - 30V P-Channel PowerTrench MOSFET
  • FDS9431A - P-Channel 2.5V Specified MOSFET
  • FDS9431A_F085 - P-Channel 2.5V Specified MOSFET
  • FDS9435A - 30V P-Channel Power Trench MOSFET
  • FDS9926A - Dual N-Channel MOSFET
  • FDS9933 - Dual P-Channel 2.5V Specified PowerTrench MOSFET
  • FDS9933A - Dual P-Channel 2.5V Specified PowerTrench MOSFET
  • FDS9933BZ - Dual P-Channel 2.5V Specified PowerTrench MOSFET

Full PDF Text Transcription

Click to expand full text
FDS9412 April 2000 FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer DC-DC converter where fast switching, low conduction loss and high efficiency are needed. Features • 7.9 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 36 mΩ @ VGS = 4.5 V • Very low gate charge. • High switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability in a widely used surface mount package.
Published: |