FDS9412 transistor equivalent, single n-channel enhancement mode field effect transistor.
* 7.9 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 36 mΩ @ VGS = 4.5 V
* Very low gate charge.
* High switching speed
* High performance trench techno.
such as notebook computer DC-DC converter where fast switching, low conduction loss and high efficiency are needed.
Fea.
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are partic.
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