FDS9412 - Single N-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor

FDS9412 Datasheet Preview — Preview of FDS9412 PDF

Datasheet Details

Part number	FDS9412
Manufacturer	Fairchild ↗ Semiconductor
File Size	230.81 KB
Description	Single N-Channel Enhancement Mode Field Effect Transistor
Datasheet	FDS9412_FairchildSemiconductor.pdf

FDS9412 Product details

Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

7.9 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 36 mΩ @ VGS = 4.5 V.
Very low gate charge.
High switching speed.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package. D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current.
Continuous.
Pulsed T.

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Other Datasheets by Fairchild Semiconductor

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Published: Mar 30, 2005 |