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FDT457N Datasheet - Fairchild Semiconductor

N-Channel MOSFET

FDT457N Features

* 5 A, 30 V. RDS(ON) = 0.06 Ω @ VGS = 10 V RDS(ON) = 0.090 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D S D SOT-223

FDT457N General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suite.

FDT457N Datasheet (94.50 KB)

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Datasheet Details

Part number:

FDT457N

Manufacturer:

Fairchild Semiconductor

File Size:

94.50 KB

Description:

N-channel mosfet.

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FDT457N N-Channel MOSFET Fairchild Semiconductor

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