5 A, 30 V. RDS(ON) = 0.06 Ω @ VGS = 10 V RDS(ON) = 0.090 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability i.

such as notebook computer power management, battery powered circuits, and DC motor control. Features 5 A, 30 V. RDS(ON).

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior sw.

FDT458P

FDT459N

FDT434P

FDT439N

FDT461N

FDT4N50NZU

FDT1600N10ALZ

FDT3612

FDT3N40

FDT86102LZ

FDT86106LZ

FDT86113LZ

FDT86244