Datasheet4U Logo Datasheet4U.com

FDT459N - N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance.

Features

  • 6.5 A, 30 V. RDS(ON) = 0.035Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D G D S G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage TA = 25oC unless otherwise noted FDT459N 30 ±20 (Note 1a) Units V V A Gate-Source Voltage - Continuous Maximum Drain Cu.

📥 Download Datasheet

Datasheet preview – FDT459N

Datasheet Details

Part number FDT459N
Manufacturer Fairchild Semiconductor
File Size 89.39 KB
Description N-Channel MOSFET
Datasheet download datasheet FDT459N Datasheet
Additional preview pages of the FDT459N datasheet.

📁 Similar Datasheet

  • FDT457N - N-Channel MOSFET (ON Semiconductor)
  • FDT434P - P-Channel MOSFET (ON Semiconductor)
  • FDT439N - N-Channel MOSFET (ON Semiconductor)
  • FDT4N50NZU - N-Channel MOSFET (ON Semiconductor)
  • FDT1600N10ALZ - N-Channel MOSFET (ON Semiconductor)
  • FDT3612 - N-Channel MOSFET (ON Semiconductor)
  • FDT86102LZ - N-Channel MOSFET (ON Semiconductor)
  • FDT86106LZ - N-Channel MOSFET (ON Semiconductor)
  • FDT86113LZ - N-Channel MOSFET (ON Semiconductor)
  • FDT86244 - N-Channel MOSFET (ON Semiconductor)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
March 1998 FDT459N N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control. Features 6.5 A, 30 V. RDS(ON) = 0.035Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
Published: |