FDT434P

P-Channel MOSFET

ON Semiconductor

FDT434P Features

* 5.5 A,

* 20 V. RDS(ON) = 0.050 Ω @ VGS =

* 4.5 V RDS(ON) = 0.070 Ω @ VGS =

* 2.5 V.

* Low gate charge (13nC typical)

* High performance trench technology for extremely low RDS(ON) .

* High power and current handling capability in a wide

FDT434P General Description

This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications

* Low Dropout Regulator

FDT434P Datasheet (226.00 KB)