FDT434P - P-Channel MOSFET
This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Applications * Low Dropout Regulator
FDT434P Features
* 5.5 A,
* 20 V. RDS(ON) = 0.050 Ω @ VGS =
* 4.5 V RDS(ON) = 0.070 Ω @ VGS =
* 2.5 V.
* Low gate charge (13nC typical)
* High performance trench technology for extremely low RDS(ON) .
* High power and current handling capability in a wide
