FDT86102LZ Datasheet - ON Semiconductor

N-Channel MOSFET

FDT86102LZ Features

* Max rDS(on) = 28 mW at VGS = 10 V, ID = 6.6 A

* Max rDS(on) = 38 mW at VGS = 4.5 V, ID = 5.5 A

* HBM ESD Protection Level > 6 kV Typical (Note 4)

* Very Low Qg and Qgd Compared to Competing Trench Technologies

* Fast Switching Speed

* 100% UIL Tested

FDT86102LZ General Description

This N *Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on *state resistance and switching loss. G *S zener has been added to enhance ESD voltage level. S D G SOT *223 CASE 318H MARKING DIAGRAM Fea.

FDT86102LZ Datasheet (277.66 KB)