FDT86102LZ Datasheet, Mosfet, ON Semiconductor

FDT86102LZ Features

• Mosfet
• Max rDS(on) = 28 mW at VGS = 10 V, ID = 6.6 A
• Max rDS(on) = 38 mW at VGS = 4.5 V, ID = 5.5 A
• HBM ESD Protection Level > 6 kV Typical (Note 4)
• Ver

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Part number:

FDT86102LZ

Manufacturer:

ON Semiconductor ↗

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📄 Datasheet

Description:

N-channel mosfet. This N

Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize t

FDT86102LZ Application

• Applications
• DC
• DC Conversion
• Inverter
• Synchronous Rectifier Specifications MOSFET MAXIMUM RATINGS (TA = 2

TAGS

FDT86102LZ

ON Semiconductor

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