FDT1600N10ALZ Datasheet - Fairchild Semiconductor

FDT1600N10ALZ MOSFET

This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance. Application * Consumer Appliances * LED TV and Monitor * Synchronous Rectific.

FDT1600N10ALZ Features

* RDS(on) = 121 mΩ (Typ.) @ VGS = 10 V, ID = 2.8 A

* RDS(on) = 156 mΩ (Typ.) @ VGS = 5 V, ID = 1.8 A

* Low Gate Charge (Typ. 2.9 nC)

* Low Crss (Typ. 2.04 pF)

* Fast Switching

* 100% Avalanche Tested

* Improved dv/dt Capability

* RoHS C

FDT1600N10ALZ-FairchildSemiconductor.pdf

FDT1600N10ALZ Datasheet Preview — Preview of FDT1600N10ALZ PDF

Datasheet Details

Part number:

FDT1600N10ALZ

Manufacturer:

Fairchild Semiconductor

File Size:

748.03 KB

Description:

Mosfet.

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FDT1600N10ALZ FDT1600N10ALZ MOSFET Fairchild Semiconductor