FDT1600N10ALZ Datasheet, Mosfet, Fairchild Semiconductor

FDT1600N10ALZ Features

• Mosfet
• RDS(on) = 121 mΩ (Typ.) @ VGS = 10 V, ID = 2.8 A
• RDS(on) = 156 mΩ (Typ.) @ VGS = 5 V, ID = 1.8 A
• Low Gate Charge (Typ. 2.9 nC)
• Low Crss (Typ. 2.0

PDF File Details

Part number:

FDT1600N10ALZ

Manufacturer:

Fairchild Semiconductor

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748.03kb

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📄 Datasheet

Description:

Mosfet. This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the

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FDT1600N10ALZ

Fairchild Semiconductor

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