FDT1600N10ALZ - MOSFET
This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance.
Application * Consumer Appliances * LED TV and Monitor * Synchronous Rectific
FDT1600N10ALZ Features
* RDS(on) = 121 mΩ (Typ.) @ VGS = 10 V, ID = 2.8 A
* RDS(on) = 156 mΩ (Typ.) @ VGS = 5 V, ID = 1.8 A
* Low Gate Charge (Typ. 2.9 nC)
* Low Crss (Typ. 2.04 pF)
* Fast Switching
* 100% Avalanche Tested
* Improved dv/dt Capability
* RoHS C
