FDT1600N10ALZ MOSFET

Fairchild Semiconductor

Description

FDT1600N10ALZ * N-Channel PowerTrench® MOSFET FDT1600N10ALZ N-Channel PowerTrench® MOSFET 100 V, 5.6 A, 160 mΩ November 2013 .
This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resista.

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Datasheet Specifications

Part number: FDT1600N10ALZ
Manufacturer: Fairchild Semiconductor
File Size: 748.03 KB
Datasheet: FDT1600N10ALZ-FairchildSemiconductor.pdf
Description: MOSFET

Features

* RDS(on) = 121 mΩ (Typ. ) @ VGS = 10 V, ID = 2.8 A
* RDS(on) = 156 mΩ (Typ. ) @ VGS = 5 V, ID = 1.8 A
* Low Gate Charge (Typ. 2.9 nC)
* Low Crss (Typ. 2.04 pF)
* Fast Switching
* 100% Avalanche Tested
* Improved dv/dt Capability
* RoHS C

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FDT1600N10ALZ MOSFET Fairchild Semiconductor

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