FDT86246L Datasheet, Mosfet, ON Semiconductor

FDT86246L Features

• Mosfet
• Max rDS(on) = 228 mW at VGS = 10 V, ID = 2 A
• Max rDS(on) = 280 mW at VGS = 4.5 V, ID = 1.8 A
• High Performance Trench Technology for Extremely Low rDS(on) <

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Part number:

FDT86246L

Manufacturer:

ON Semiconductor ↗

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259.53kb

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📄 Datasheet

Description:

N-channel mosfet. This N

Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for rDS(on), switching

FDT86246L Application

• Applications
• Load Switch
• Primary Switch
• Buck/Boost Switch Specifications MOSFET MAXIMUM RATINGS (TA = 25C unless ot

TAGS

FDT86246L

ON Semiconductor

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