FDT86246L - N-Channel MOSFET

ON Semiconductor

FDT86246L Datasheet Preview — Preview of FDT86246L PDF

Datasheet Details

Part number	FDT86246L
Manufacturer	ON Semiconductor ↗
File Size	259.53 KB
Description	N-Channel MOSFET
Datasheet	FDT86246L-ONSemiconductor.pdf

FDT86246L Product details

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness.

Features

Max rDS(on) = 228 mW at VGS = 10 V, ID = 2 A.
Max rDS(on) = 280 mW at VGS = 4.5 V, ID = 1.8 A.
High Performance Trench Technology for Extremely Low rDS(on).
High Power and Current Handling Capability in a widely used Surface Mount Package.
Fast Switching Speed.
100% UIL Tested.
These Devices are Pb.
Free and are RoHS Compliant.

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Published: Dec 25, 2023 |