FDT86246L N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, POWERTRENCH) 150 V, 2 A, 228 mW FDT86246L General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for rDS(on), switching performance and r.

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Datasheet Specifications

Part number: FDT86246L
Manufacturer: ON Semiconductor ↗
File Size: 259.53 KB
Datasheet: FDT86246L-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max rDS(on) = 228 mW at VGS = 10 V, ID = 2 A
* Max rDS(on) = 280 mW at VGS = 4.5 V, ID = 1.8 A
* High Performance Trench Technology for Extremely Low rDS(on)
* High Power and Current Handling Capability in a widely used Surface Mount Package
* Fast Switching Speed
* 100% UI

Applications

* Load Switch
* Primary Switch
* Buck/Boost Switch Specifications MOSFET MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage 150 V VGS Gate to Source Voltage 20 V ID Drain Current Continuous TA = 25C 2 A (Note 1a

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FDT86246L N-Channel MOSFET ON Semiconductor

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