FDT86246L

N-Channel MOSFET

ON Semiconductor

* Max rDS(on) = 228 mW at VGS = 10 V, ID = 2 A

* Max rDS(on) = 280 mW at VGS = 4.5 V, ID = 1.8 A

* High Performance Trench Technology for Extremely Low rDS(on)

* High Power and Current Handling Capability in a widely used Surface Mount Package

* Fast Switching Speed

* 100% UI

FDT86246L

259.53 KB

N-channel mosfet.

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FDT86246L N-Channel MOSFET ON Semiconductor

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