Part number:
FDT86102LZ
Manufacturer:
Fairchild Semiconductor
File Size:
261.83 KB
Description:
Mosfet.
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss.
G-S zener has been added to enhance ESD voltage level.
Applications * DC-DC conversion * Inverter
FDT86102LZ Features
* Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A
* Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5.5 A
* HBM ESD protection level > 6 kV typical (Note 4)
* Very low Qg and Qgd compared to competing trench technologies
* Fast switching speed
* 100% UIL Tested
FDT86102LZ-FairchildSemiconductor.pdf
Datasheet Details
FDT86102LZ
Fairchild Semiconductor
261.83 KB
Mosfet.
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