FDT86102LZ Datasheet - Fairchild Semiconductor

FDT86102LZ - MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss.

G-S zener has been added to enhance ESD voltage level.

Applications * DC-DC conversion * Inverter

FDT86102LZ Features

* Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A

* Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5.5 A

* HBM ESD protection level > 6 kV typical (Note 4)

* Very low Qg and Qgd compared to competing trench technologies

* Fast switching speed

* 100% UIL Tested

FDT86102LZ-FairchildSemiconductor.pdf

FDT86102LZ Datasheet Preview — Preview of FDT86102LZ PDF

Datasheet Details

Part number:

FDT86102LZ

Manufacturer:

Fairchild Semiconductor

File Size:

261.83 KB

Description:

Mosfet.

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FDT86102LZ MOSFET Fairchild Semiconductor