FDT86102LZ - MOSFET

Fairchild Semiconductor

FDT86102LZ Datasheet Preview — Preview of FDT86102LZ PDF

Datasheet Details

Part number	FDT86102LZ
Manufacturer	Fairchild ↗ Semiconductor
File Size	261.83 KB
Description	MOSFET
Datasheet	FDT86102LZ-FairchildSemiconductor.pdf

FDT86102LZ Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. DC-DC conversion Inverter Synchronous Rectifier D SOT-223 S D G MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Volt

Features

Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A.
Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5.5 A.
HBM ESD protection level > 6 kV typical (Note 4).
Very low Qg and Qgd compared to competing trench technologies.
Fast switching speed.
100% UIL Tested.
RoHS Compliant General.

📁 FDT86102LZ Similar Datasheet

FDT1600N10ALZ - N-Channel MOSFET (ON Semiconductor)
FDT3612 - N-Channel MOSFET (ON Semiconductor)
FDT434P - P-Channel MOSFET (ON Semiconductor)
FDT439N - N-Channel MOSFET (ON Semiconductor)
FDT457N - N-Channel MOSFET (ON Semiconductor)
FDT4N50NZU - N-Channel MOSFET (ON Semiconductor)

Other Datasheets by Fairchild Semiconductor

FDT86106LZ - MOSFET
FDT86113LZ - MOSFET
FDT86244 - MOSFET
FDT86246 - MOSFET
FDT86246L - N-Channel PowerTrench MOSFET
FDT86256 - MOSFET

Published: Jan 11, 2017 |