FDT86102LZ Datasheet - Fairchild Semiconductor

FDT86102LZ MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Applications * DC-DC conversion * Inverter .

FDT86102LZ Features

* Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A

* Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5.5 A

* HBM ESD protection level > 6 kV typical (Note 4)

* Very low Qg and Qgd compared to competing trench technologies

* Fast switching speed

* 100% UIL Tested

FDT86102LZ-FairchildSemiconductor.pdf