FDT439N

N-Channel MOSFET

ON Semiconductor

FDT439N Features

* 6.3 A, 30 V RDS(on) = 0.045 W @ VGS = 4.5 V RDS(on) = 0.058 W @ VGS = 2.5 V

* Fast switching speed.

* High power and current handling capability in a widely used surface mount package.

* This Device is Pb

* Free Applications

* DC/DC Converter

FDT439N General Description

This N

*Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on

*state resistance and provide superior switching performance. These products a.

FDT439N Datasheet (201.79 KB)