FDT439N N-Channel MOSFET

ON Semiconductor

Description

DATA SHEET www.onsemi.com Transistor, N-Channel, Field Effect, Enhancement Mode, 2.5 V Specified FDT439N General .
This N. Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: FDT439N
Manufacturer: ON Semiconductor ↗
File Size: 201.79 KB
Datasheet: FDT439N-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 6.3 A, 30 V RDS(on) = 0.045 W @ VGS = 4.5 V RDS(on) = 0.058 W @ VGS = 2.5 V
* Fast switching speed.
* High power and current handling capability in a widely used surface mount package.
* This Device is Pb

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FDT439N N-Channel MOSFET ON Semiconductor

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