FDT86113LZ Datasheet - ON Semiconductor

N-Channel MOSFET

* Max rDS(on) = 100 mW at VGS = 10 V, ID = 3.3 A

* Max rDS(on) = 145 mW at VGS = 4.5 V, ID = 2.7 A

* High Performance Trench Technology for Extremely Low rDS(on)

* High Power and Current Handling Capability in a Widely Used Surface Mount Package

* HBM ESD Prot

FDT86113LZ

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N-channel mosfet.

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FDT86113LZ N-Channel MOSFET ON Semiconductor

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