FDT86113LZ Datasheet PDF (N-Channel MOSFET) | Download ON Semiconductor FDT86113LZ

FDT86113LZ - N-Channel MOSFET

Description

This N Channel logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been special tailored to minimize the on

state resistance and yet maintain superior switching performance.

S zener has been added to enhance ESD voltage level.

Features

Max rDS(on) = 100 mW at VGS = 10 V, ID = 3.3 A.
Max rDS(on) = 145 mW at VGS = 4.5 V, ID = 2.7 A.
High Performance Trench Technology for Extremely Low rDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
HBM ESD Protection Level > 3 kV Typical (Note 4).
100% UIL Tested.
This Device is Pb.
Free and Halide Free.

Datasheet Details

Part number	FDT86113LZ
Manufacturer	ON Semiconductor
File Size	269.43 KB
Description	N-Channel MOSFET
Datasheet	FDT86113LZ Datasheet
Additional preview pages of the FDT86113LZ datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, POWERTRENCH) 100 V, 3.3 A, 100 mW FDT86113LZ General Description This N−Channel logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been special tailored to minimize the on−state resistance and yet maintain superior switching performance. G−S zener has been added to enhance ESD voltage level. Features • Max rDS(on) = 100 mW at VGS = 10 V, ID = 3.3 A • Max rDS(on) = 145 mW at VGS = 4.5 V, ID = 2.

Published: Dec 25, 2023 |