FDT86113LZ - N-Channel MOSFET
FDT86113LZ Features
* Max rDS(on) = 100 mW at VGS = 10 V, ID = 3.3 A
* Max rDS(on) = 145 mW at VGS = 4.5 V, ID = 2.7 A
* High Performance Trench Technology for Extremely Low rDS(on)
* High Power and Current Handling Capability in a Widely Used Surface Mount Package
* HBM ESD Prot
