FDT459N Datasheet, Mosfet, Fairchild Semiconductor

FDT459N Features

• Mosfet 6.5 A, 30 V. RDS(ON) = 0.035Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely us

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FDT459N

Manufacturer:

Fairchild Semiconductor

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📄 Datasheet

Description:

N-channel mosfet. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS t

FDT459N Application

• Applications such as notebook computer power management, battery powered circuits, and DC motor control. Features 6.5 A, 30 V. RDS(ON) = 0.035Ω @ V

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FDT459N

Fairchild Semiconductor

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