FDT439N Datasheet - Fairchild Semiconductor

FDT439N N-Channel MOSFET

This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance, and provide superior switching performance. These products are we.

FDT439N Features

* 6.3 A, 30 V. RDS(on) = 0.045 Ω @ VGS = 4.5 V RDS(on) = 0.058 Ω @ VGS = 2.5 V Fast switching speed. High power and current handling capabitlity in a widely used surface mount package. Applications DC/DC converter Load switch Motor driving D D D D S D SOT-223 S G D S G SOT-223

FDT439N_FairchildSemiconductor.pdf