FDT3612 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, POWERTRENCH) 100 V FDT3612 General .
This N. Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or convent.

📥 Download Datasheet

FDT3612 Datasheet Preview — Preview of FDT3612 PDF

Datasheet Specifications

Part number: FDT3612
Manufacturer: ON Semiconductor ↗
File Size: 210.15 KB
Datasheet: FDT3612-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 3.7 A, 100 V
* RDS(ON) = 120 mW @ VGS = 10 V
* RDS(ON) = 130 mW @ VGS = 6 V
* Fast Switching Speed
* Low Gate Charge (14 nC Typ)
* High Performance Trench Technology for Extremely Low RDS(ON)
* High Power and Current Handling Capability in a

Applications

* DC/DC Converter
* Power Management ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Value Unit VDSS VGSS ID Drain
* Source Voltage Gate
* Source Voltage Drain Current
* Continuous (Note 1a) 100 V ±20 V A 3.7
* Pu

FDT3612 Distributors

📁 Related Datasheet

FDT3N40 FDT1600N10ALZ FDT434P FDT439N FDT457N FDT458P

📌 All Tags

FDT3612 N-Channel MOSFET ON Semiconductor

ON Semiconductor FDT3612-like datasheet