Description
FDT458P June 2001 FDT458P 30V P-Channel PowerTrench® MOSFET General .
This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.
Features
* 3.4 A,
* 30 V. RDS(ON) = 130 mΩ @ V GS = 10 V RDS(ON) = 200 mΩ @ V GS = 4.5 V
* Fast switching speed
* Low gate charge (2.5 nC typical)
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability in a wi
Applications
* Battery chargers
* Motor drives
D
D D
D
S D SOT-223 G
S
G
D
S
SOT-223
* (J23Z)
G
G
S
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed Maximum Power Dissipation
TA=25oC unle