FDT458P - 30V P-Channel MOSFET
FDT458P Features
* 3.4 A,
* 30 V. RDS(ON) = 130 mΩ @ V GS = 10 V RDS(ON) = 200 mΩ @ V GS = 4.5 V
* Fast switching speed
* Low gate charge (2.5 nC typical)
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability in a wi
