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FDT458P 30V P-Channel MOSFET

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Description

FDT458P June 2001 FDT458P 30V P-Channel PowerTrench® MOSFET General .
This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Specifications

Part number
FDT458P
Manufacturer
Fairchild Semiconductor
File Size
99.75 KB
Datasheet
FDT458P_FairchildSemiconductor.pdf
Description
30V P-Channel MOSFET

Features

* 3.4 A,
* 30 V. RDS(ON) = 130 mΩ @ V GS = 10 V RDS(ON) = 200 mΩ @ V GS = 4.5 V
* Fast switching speed
* Low gate charge (2.5 nC typical)
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability in a wi

Applications

* Battery chargers
* Motor drives D D D D S D SOT-223 G S G D S SOT-223
* (J23Z) G G S Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed Maximum Power Dissipation TA=25oC unle

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