FDT86106LZ

N-Channel MOSFET

ON Semiconductor

* Max rDS(on) = 108 mW at VGS = 10 V, ID = 3.2 A

* Max rDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A

* High Performance Trench Technology for Extremely Low rDS(on)

* High Power and Current Handling Capability in a Widely Used Surface Mount Package

* HBM ESD Protection Level > 3 kV

FDT86106LZ

285.15 KB

N-channel mosfet.

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FDT86106LZ N-Channel MOSFET ON Semiconductor

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