FDT86106LZ - N-Channel MOSFET

ON Semiconductor

FDT86106LZ Datasheet Preview — Preview of FDT86106LZ PDF

Datasheet Details

Part number	FDT86106LZ
Manufacturer	ON Semiconductor ↗
File Size	285.15 KB
Description	N-Channel MOSFET
Datasheet	FDT86106LZ-ONSemiconductor.pdf

FDT86106LZ Product details

Description

This N Channel logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been special tailored to minimize the on state resistance and yet maintain superior switching performance. S zener has been added to enhance ESD voltage level.

Features

Max rDS(on) = 108 mW at VGS = 10 V, ID = 3.2 A.
Max rDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A.
High Performance Trench Technology for Extremely Low rDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
HBM ESD Protection Level > 3 kV Typical (Note 4).
100% UIL Tested.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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Published: Dec 25, 2023 |