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FDT86244 - MOSFET

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FDT86244 Product details

Description

Shielded Gate MOSFET Technology Max rDS(on) = 128 mΩ at VGS = 10 V, ID = 2.8 A Max rDS(on) = 178 mΩ at VGS = 6 V, ID = 2.4 A High Performance Trench Technology for Extremely Low rDS(on) High Power and Current Handling Capability in a Widely Used Surface Mount Package Fast Switching Speed 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process th

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