FDT1600N10ALZ - N-Channel MOSFET

ON Semiconductor

FDT1600N10ALZ Datasheet Preview — Preview of FDT1600N10ALZ PDF

Datasheet Details

Part number	FDT1600N10ALZ
Manufacturer	ON Semiconductor ↗
File Size	416.38 KB
Description	N-Channel MOSFET
Datasheet	FDT1600N10ALZ-ONSemiconductor.pdf

FDT1600N10ALZ Product details

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been tailored to minimize the on state resistance and maintain superior switching performance.

Features

RDS(on) = 121 mW (Typ. ) @ VGS = 10 V, ID = 2.8 A.
RDS(on) = 156 mW (Typ. ) @ VGS = 5 V, ID = 1.8 A.
Low Gate Charge (Typ. 2.9 nC).
Low Crss (Typ. 2.04 pF).
Fast Switching.
100% Avalanche Tested.
Improved dv/dt Capability.
ESD Protection Level: HBM > 5.2 kV, MM > 400 V, CDM > 1.5 kV.
RoHS Compliant.

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Published: Dec 25, 2023 |