FDT1600N10ALZ

N-Channel MOSFET

ON Semiconductor

* RDS(on) = 121 mW (Typ.) @ VGS = 10 V, ID = 2.8 A

* RDS(on) = 156 mW (Typ.) @ VGS = 5 V, ID = 1.8 A

* Low Gate Charge (Typ. 2.9 nC)

* Low Crss (Typ. 2.04 pF)

* Fast Switching

* 100% Avalanche Tested

* Improved dv/dt Capability

* ESD Pr

FDT1600N10ALZ

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N-channel mosfet.

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FDT1600N10ALZ N-Channel MOSFET ON Semiconductor

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