FDT1600N10ALZ N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, POWERTRENCH) 100 V, 5.6 A, 160 mW FDT1600N10ALZ General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been tailored to minimize the on. state resistan.

📥 Download Datasheet

FDT1600N10ALZ Datasheet Preview — Preview of FDT1600N10ALZ PDF

Datasheet Specifications

Part number: FDT1600N10ALZ
Manufacturer: ON Semiconductor ↗
File Size: 416.38 KB
Datasheet: FDT1600N10ALZ-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* RDS(on) = 121 mW (Typ. ) @ VGS = 10 V, ID = 2.8 A
* RDS(on) = 156 mW (Typ. ) @ VGS = 5 V, ID = 1.8 A
* Low Gate Charge (Typ. 2.9 nC)
* Low Crss (Typ. 2.04 pF)
* Fast Switching
* 100% Avalanche Tested
* Improved dv/dt Capability
* ESD Pr

Applications

* Consumer Appliances
* LED TV and Monitor
* Synchronous Rectification
* Uninterruptible Power Supply
* Micro Solar Inverter DATA SHEET www. onsemi. com D S D G SOT
* 223 CASE 318H MARKING DIAGRAM AYW 10ALZG G 1 A = Assembly Location Y = Year W =

FDT1600N10ALZ Distributors

📁 Related Datasheet

FDT3612 FDT3N40 FDT434P FDT439N FDT457N FDT458P

📌 All Tags

FDT1600N10ALZ N-Channel MOSFET ON Semiconductor

ON Semiconductor FDT1600N10ALZ-like datasheet