FDT1600N10ALZ Datasheet, Mosfet, ON Semiconductor

FDT1600N10ALZ Features

• Mosfet
• RDS(on) = 121 mW (Typ.) @ VGS = 10 V, ID = 2.8 A
• RDS(on) = 156 mW (Typ.) @ VGS = 5 V, ID = 1.8 A
• Low Gate Charge (Typ. 2.9 nC)
• Low Crss (Typ. 2.0

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Part number:

FDT1600N10ALZ

Manufacturer:

ON Semiconductor ↗

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📄 Datasheet

Description:

N-channel mosfet. This N

Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been tailored to minimize the on

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FDT1600N10ALZ Application

• Applications
• Consumer Appliances
• LED TV and Monitor
• Synchronous Rectification
• Uninterruptible Power Supply <

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FDT1600N10ALZ

ON Semiconductor

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