FDT3612 - 100V N-Channel PowerTrench MOSFET
FDT3612 Features
* 3.7 A, 100 V. RDS(ON) = 120 mΩ @ VGS = 10 V RDS(ON) = 130 mΩ @ VGS = 6 V
* Fast switching speed
* Low gate charge (14nC typ)
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability in a widely used surface
