FDT3612 100V N-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

FDT3612 March 2001 FDT3612 100V N-Channel PowerTrench MOSFET General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Specifications

Part number: FDT3612
Manufacturer: Fairchild Semiconductor
File Size: 108.02 KB
Datasheet: FDT3612_FairchildSemiconductor.pdf
Description: 100V N-Channel PowerTrench MOSFET

Features

* 3.7 A, 100 V. RDS(ON) = 120 mΩ @ VGS = 10 V RDS(ON) = 130 mΩ @ VGS = 6 V
* Fast switching speed
* Low gate charge (14nC typ)
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability in a widely used surface

Applications

* DC/DC converter
* Motor driving D D D D S D SOT-223 S G G D S SOT-223
* (J23Z) G G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed Maximum Power Dissipation TA=25oC unle

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FDT3612 100V N-Channel PowerTrench MOSFET Fairchild Semiconductor

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