FDT86246 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel Shielded Gate POWERTRENCH) 150 V, 2 A, 236 mW FDT86246 .
This N. Channel MOSFET is produced using Fairchild onsemi advanced PowerTrench® Process that has been optimized for RDS(on), switching performa.

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Datasheet Specifications

Part number: FDT86246
Manufacturer: ON Semiconductor ↗
File Size: 243.98 KB
Datasheet: FDT86246-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max RDS(on) = 236 mW at VGS = 10 V, ID = 2 A
* Max RDS(on) = 329 mW at VGS = 6 V, ID = 1.7 A
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability in a Widely Used Surface Mount Package
* Fast Switching S

Applications

* Load Switch
* Primary Switch MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current
* Continuous (Note 1a) 150 V ±20 V 2 A
* Pulsed 8 EAS Single Pulse

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FDT86246 N-Channel MOSFET ON Semiconductor

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