FDT86246

N-Channel MOSFET

ON Semiconductor

* Max RDS(on) = 236 mW at VGS = 10 V, ID = 2 A

* Max RDS(on) = 329 mW at VGS = 6 V, ID = 1.7 A

* High Performance Trench Technology for Extremely Low RDS(on)

* High Power and Current Handling Capability in a Widely Used Surface Mount Package

* Fast Switching S

FDT86246

243.98 KB

N-channel mosfet.

📁 Related Datasheet

FDT86244 MOSFET (Fairchild Semiconductor)

FDT86244 N-Channel MOSFET (ON Semiconductor)

FDT86244 N-Channel Enhancement MOSFET (Kexin)

FDT86246 MOSFET (Fairchild Semiconductor)

FDT86246L N-Channel PowerTrench MOSFET (Fairchild Semiconductor)

FDT86246L N-Channel MOSFET (ON Semiconductor)

FDT86256 MOSFET (Fairchild Semiconductor)

FDT86102LZ MOSFET (Fairchild Semiconductor)

FDT86102LZ N-Channel MOSFET (ON Semiconductor)

FDT86106LZ MOSFET (Fairchild Semiconductor)

TAGS

FDT86246 N-Channel MOSFET ON Semiconductor

Image Gallery