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FDT86106LZ - MOSFET

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FDT86106LZ Product details

Description

January 2013 Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package HBM ESD protection level > 3 KV typical (Note 4) 100% UIL tested This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has b

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