Datasheet Details
| Part number | FDT86106LZ |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 350.64 KB |
| Description | MOSFET |
| Datasheet |
 FDT86106LZ-FairchildSemiconductor.pdf
|
| Part number | FDT86106LZ |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 350.64 KB |
| Description | MOSFET |
| Datasheet |
FDT86106LZ-FairchildSemiconductor.pdf
|
January 2013 Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package HBM ESD protection level > 3 KV typical (Note 4) 100% UIL tested This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has b
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