FDT86106LZ - MOSFET
January 2013 * Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A * Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A * High performance trench technology for extremely low rDS(on) * High power and current handling capability in a widely used surface mount package
