FDT86106LZ Datasheet, Mosfet, Fairchild Semiconductor

FDT86106LZ Features

  • Mosfet General Description January 2013
  • Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A
  • Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
  • High performance trench

PDF File Details

Part number:

FDT86106LZ

Manufacturer:

Fairchild Semiconductor

File Size:

350.64kb

Download:

📄 Datasheet

Description:

Mosfet. January 2013

  • Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A
  • Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
  • Datasheet Preview: FDT86106LZ 📥 Download PDF (350.64kb)
    Page 2 of FDT86106LZ Page 3 of FDT86106LZ

    TAGS

    FDT86106LZ
    MOSFET
    Fairchild Semiconductor

    📁 Related Datasheet

    FDT86106LZ - N-Channel MOSFET (ON Semiconductor)
    MOSFET – N-Channel, POWERTRENCH) 100 V, 3.2 A, 108 mW FDT86106LZ General Description This N−Channel logic Level MOSFETs are produced using onsemi’s a.

    FDT86102LZ - MOSFET (Fairchild Semiconductor)
    FDT86102LZ N-Channel PowerTrench® MOSFET November 2010 FDT86102LZ N-Channel PowerTrench® MOSFET 100 V, 6.6 A, 28 mΩ Features „ Max rDS(on) = 28 mΩ a.

    FDT86102LZ - N-Channel MOSFET (ON Semiconductor)
    DATA SHEET .onsemi. MOSFET – N-Channel, POWERTRENCH) 100 V, 6.6 A, 28 mW FDT86102LZ General Description This N−Channel MOSFET is produced usin.

    FDT86113LZ - MOSFET (Fairchild Semiconductor)
    FDT86113LZ N-Channel PowerTrench® MOSFET March 2011 FDT86113LZ N-Channel PowerTrench® MOSFET 100 V, 3.3 A, 100 m: Features General Description „ .

    FDT86113LZ - N-Channel MOSFET (ON Semiconductor)
    MOSFET – N-Channel, POWERTRENCH) 100 V, 3.3 A, 100 mW FDT86113LZ General Description This N−Channel logic Level MOSFET is produced using onsemi’s adv.

    FDT86244 - MOSFET (Fairchild Semiconductor)
    FDT86244 N-Channel Shielded Gate PowerTrench® MOSFET January 2016 FDT86244 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 2.8 A, 128 mΩ Feature.

    FDT86244 - N-Channel MOSFET (ON Semiconductor)
    MOSFET – N-Channel Shielded Gate POWERTRENCH) 150 V, 2.8 A, 128 mW FDT86244 Description This N−Channel MOSFET is produced using Fairchild onsemi adva.

    FDT86244 - N-Channel Enhancement MOSFET (Kexin)
    SMD Type N-Channel Enhancement MOSFET FDT86244 MOSFET ■ Features ● VDS (V) = 150V ● ID = 2.8 A (VGS = 10V) ● RDS(ON) < 285mΩ (VGS = 10V) ● RDS(ON) .

    FDT86246 - MOSFET (Fairchild Semiconductor)
    FDT86246 N-Channel Power Trench® MOSFET December 2010 FDT86246 N-Channel Power Trench® MOSFET 150 V, 2 A, 236 mΩ Features General Description „ M.

    FDT86246 - N-Channel MOSFET (ON Semiconductor)
    MOSFET – N-Channel Shielded Gate POWERTRENCH) 150 V, 2 A, 236 mW FDT86246 Description This N−Channel MOSFET is produced using Fairchild onsemi advanc.

    Stock and price

    part
    onsemi
    MOSFET N-CH 100V 3.2A SOT223-4
    DigiKey
    FDT86106LZ
    8000 In Stock
    Qty : 4000 units
    Unit Price : $0.51
    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts