Datasheet Details
| Part number | FDT86246 |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 235.41 KB |
| Description | MOSFET |
| Datasheet |
 FDT86246-FairchildSemiconductor.pdf
|
| Part number | FDT86246 |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 235.41 KB |
| Description | MOSFET |
| Datasheet |
FDT86246-FairchildSemiconductor.pdf
|
Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switchin
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