FDT86246
Fairchild Semiconductor
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FDT86244 - MOSFET
(Fairchild Semiconductor)
FDT86244 N-Channel Shielded Gate PowerTrench® MOSFET
January 2016
FDT86244
N-Channel Shielded Gate PowerTrench® MOSFET
150 V, 2.8 A, 128 mΩ
Feature.
FDT86244 - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel Shielded Gate POWERTRENCH)
150 V, 2.8 A, 128 mW
FDT86244
Description This N−Channel MOSFET is produced using Fairchild onsemi
adva.
FDT86244 - N-Channel Enhancement MOSFET
(Kexin)
SMD Type
N-Channel Enhancement MOSFET FDT86244
MOSFET
■ Features
● VDS (V) = 150V ● ID = 2.8 A (VGS = 10V) ● RDS(ON) < 285mΩ (VGS = 10V) ● RDS(ON) .
FDT86246 - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel Shielded Gate POWERTRENCH)
150 V, 2 A, 236 mW
FDT86246
Description This N−Channel MOSFET is produced using Fairchild onsemi
advanc.
FDT86246L - N-Channel PowerTrench MOSFET
(Fairchild Semiconductor)
FDT86246L N-Channel PowerTrench® MOSFET
February 2016
FDT86246L
N-Channel PowerTrench® MOSFET
150 V, 2 A, 228 mΩ
Features
General Description
M.
FDT86246L - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH)
150 V, 2 A, 228 mW
FDT86246L
General Description This N−Channel MOSFET is produced using onsemi’s advanced
POWERTREN.
FDT86256 - MOSFET
(Fairchild Semiconductor)
FDT86256 N-Channel PowerTrench® MOSFET
FDT86256
N-Channel PowerTrench® MOSFET
150 V, 1.2 A, 845 mΩ Features
Max rDS(on) = 845 mΩ at VGS = 10 V, ID .
FDT86102LZ - MOSFET
(Fairchild Semiconductor)
FDT86102LZ N-Channel PowerTrench® MOSFET
November 2010
FDT86102LZ
N-Channel PowerTrench® MOSFET
100 V, 6.6 A, 28 mΩ Features
Max rDS(on) = 28 mΩ a.
FDT86102LZ - N-Channel MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
MOSFET – N-Channel, POWERTRENCH)
100 V, 6.6 A, 28 mW
FDT86102LZ
General Description This N−Channel MOSFET is produced usin.
FDT86106LZ - MOSFET
(Fairchild Semiconductor)
FDT86106LZ N-Channel PowerTrench® MOSFET
FDT86106LZ
N-Channel PowerTrench® MOSFET
100 V, 3.2 A, 108 mΩ
Features
General Description
January 2013.