Datasheet4U Logo Datasheet4U.com

FDT86113LZ

MOSFET

FDT86113LZ Features

* General Description

* Max rDS(on) = 100 m: at VGS = 10 V, ID = 3.3 A

* Max rDS(on) = 145 m: at VGS = 4.5 V, ID = 2.7 A

* High performance trench technology for extremely low rDS(on)

* High power and current handling capability in a widely used surface mount package

FDT86113LZ General Description



* Max rDS(on) = 100 m: at VGS = 10 V, ID = 3.3 A

* Max rDS(on) = 145 m: at VGS = 4.5 V, ID = 2.7 A

* High performance trench technology for extremely low rDS(on)

* High power and current handling capability in a widely used surface mount package

* HBM ESD pro.

FDT86113LZ Datasheet (225.38 KB)

Preview of FDT86113LZ PDF

Datasheet Details

Part number:

FDT86113LZ

Manufacturer:

Fairchild Semiconductor

File Size:

225.38 KB

Description:

Mosfet.

📁 Related Datasheet

FDT86113LZ N-Channel MOSFET (ON Semiconductor)

FDT86102LZ MOSFET (Fairchild Semiconductor)

FDT86102LZ N-Channel MOSFET (ON Semiconductor)

FDT86106LZ MOSFET (Fairchild Semiconductor)

FDT86106LZ N-Channel MOSFET (ON Semiconductor)

FDT86244 MOSFET (Fairchild Semiconductor)

FDT86244 N-Channel MOSFET (ON Semiconductor)

FDT86244 N-Channel Enhancement MOSFET (Kexin)

FDT86246 MOSFET (Fairchild Semiconductor)

FDT86246 N-Channel MOSFET (ON Semiconductor)

TAGS

FDT86113LZ MOSFET Fairchild Semiconductor

Image Gallery

FDT86113LZ Datasheet Preview Page 2 FDT86113LZ Datasheet Preview Page 3

FDT86113LZ Distributor