FDT86246L N-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

FDT86246L N-Channel PowerTrench® MOSFET February 2016 FDT86246L N-Channel PowerTrench® MOSFET 150 V, 2 A, 228 mΩ .
Max rDS(on) = 228 mΩ at VGS = 10 V, ID = 2 A. Max rDS(on) = 280 mΩ at VGS = 4. High performance trench te.

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Datasheet Specifications

Part number: FDT86246L
Manufacturer: Fairchild Semiconductor
File Size: 299.33 KB
Datasheet: FDT86246L-FairchildSemiconductor.pdf
Description: N-Channel PowerTrench MOSFET

Applications

* Load Switch
* Primary Switch
* Buck/Boost Switch D D SOT-223 S D G GDS MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25 °C

FDT86246L Distributors

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FDT86246L N-Channel PowerTrench MOSFET Fairchild Semiconductor

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