FDT86256 Datasheet, Mosfet, Fairchild Semiconductor

FDT86256 Features

  • Mosfet
  • Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A
  • Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A
  • Very low Qg and Qgd compared to competing trench technologi

PDF File Details

Part number:

FDT86256

Manufacturer:

Fairchild Semiconductor

File Size:

246.36kb

Download:

📄 Datasheet

Description:

Mosfet. This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to

Datasheet Preview: FDT86256 📥 Download PDF (246.36kb)
Page 2 of FDT86256 Page 3 of FDT86256

FDT86256 Application

  • Applications
  • DC-DC conversion
  • Inverter
  • Synchronous Rectifier D SOT-223 S D G D GDS MOSFET Maximum Ratings TA = 2

TAGS

FDT86256
MOSFET
Fairchild Semiconductor

📁 Related Datasheet

FDT86244 - MOSFET (Fairchild Semiconductor)
FDT86244 N-Channel Shielded Gate PowerTrench® MOSFET January 2016 FDT86244 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 2.8 A, 128 mΩ Feature.

FDT86244 - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel Shielded Gate POWERTRENCH) 150 V, 2.8 A, 128 mW FDT86244 Description This N−Channel MOSFET is produced using Fairchild onsemi adva.

FDT86244 - N-Channel Enhancement MOSFET (Kexin)
SMD Type N-Channel Enhancement MOSFET FDT86244 MOSFET ■ Features ● VDS (V) = 150V ● ID = 2.8 A (VGS = 10V) ● RDS(ON) < 285mΩ (VGS = 10V) ● RDS(ON) .

FDT86246 - MOSFET (Fairchild Semiconductor)
FDT86246 N-Channel Power Trench® MOSFET December 2010 FDT86246 N-Channel Power Trench® MOSFET 150 V, 2 A, 236 mΩ Features General Description „ M.

FDT86246 - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel Shielded Gate POWERTRENCH) 150 V, 2 A, 236 mW FDT86246 Description This N−Channel MOSFET is produced using Fairchild onsemi advanc.

FDT86246L - N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDT86246L N-Channel PowerTrench® MOSFET February 2016 FDT86246L N-Channel PowerTrench® MOSFET 150 V, 2 A, 228 mΩ Features General Description „ M.

FDT86246L - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH) 150 V, 2 A, 228 mW FDT86246L General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTREN.

FDT86102LZ - MOSFET (Fairchild Semiconductor)
FDT86102LZ N-Channel PowerTrench® MOSFET November 2010 FDT86102LZ N-Channel PowerTrench® MOSFET 100 V, 6.6 A, 28 mΩ Features „ Max rDS(on) = 28 mΩ a.

FDT86102LZ - N-Channel MOSFET (ON Semiconductor)
DATA SHEET .onsemi. MOSFET – N-Channel, POWERTRENCH) 100 V, 6.6 A, 28 mW FDT86102LZ General Description This N−Channel MOSFET is produced usin.

FDT86106LZ - MOSFET (Fairchild Semiconductor)
FDT86106LZ N-Channel PowerTrench® MOSFET FDT86106LZ N-Channel PowerTrench® MOSFET 100 V, 3.2 A, 108 mΩ Features General Description January 2013.

Stock and price

part
onsemi
MOSFET N-CH 150V 1.2A/3A SOT223
DigiKey
FDT86256
647 In Stock
Qty : 500 units
Unit Price : $0.66
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts