FDT86256

MOSFET

Fairchild Semiconductor

FDT86256 Features

* Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A

* Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A

* Very low Qg and Qgd compared to competing trench technologies August 2011 General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Powe

FDT86256 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.

* Fast switching speed

* 100% UIL Tested <.

FDT86256 Datasheet (246.36 KB)

FDT86256 Datasheet Preview — Preview of FDT86256 PDF

Datasheet Details

Part number:

FDT86256

Manufacturer:

Fairchild Semiconductor

File Size:

246.36 KB

Description:

Mosfet.

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FDT86256 MOSFET Fairchild Semiconductor

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FDT86256 Features

FDT86256 General Description

Datasheet Details

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