FDT439N Overview
Description
This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance, and provide superior switching performance.
Key Features
- RDS(on) = 0.045 Ω @ VGS = 4.5 V RDS(on) = 0.058 Ω @ VGS = 2.5 V Fast switching speed
- High power and current handling capabitlity in a widely used surface mount package
