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FDT439N - N-Channel MOSFET

Description

This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize onstate resistance, and provide superior switching performance.

Features

  • • • • 6.3 A, 30 V. RDS(on) = 0.045 Ω @ VGS = 4.5 V RDS(on) = 0.058 Ω @ VGS = 2.5 V Fast switching speed. High power and current handling capabitlity in a widely used surface mount package.

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Datasheet Details

Part number FDT439N
Manufacturer Fairchild Semiconductor
File Size 289.55 KB
Description N-Channel MOSFET
Datasheet download datasheet FDT439N Datasheet
Additional preview pages of the FDT439N datasheet.

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Full PDF Text Transcription

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FDT439N June 1999 FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance, and provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control. Features • • • 6.3 A, 30 V. RDS(on) = 0.045 Ω @ VGS = 4.5 V RDS(on) = 0.058 Ω @ VGS = 2.5 V Fast switching speed. High power and current handling capabitlity in a widely used surface mount package.
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