* Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 35A
* Max rDS(on) = 12.0mΩ at VGS = 4.5V, ID = 35A
* Low gate charge: Qg(10) = 21nC(Typ), VGS = 10V
* Low gat.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching s.

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