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FDW2511NZ - Dual N-Channel MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • ! 7.1A, 20V rDS(ON) =0.020Ω, VGS = 4.5V rDS(ON) =0.025Ω, VGS = 2.5V ! Extended VGS range (±12 V) for battery.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET D May 2008 FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET Features ! 7.1A, 20V rDS(ON) =0.020Ω, VGS = 4.5V rDS(ON) =0.025Ω, VGS = 2.5V ! Extended VGS range (±12 V) for battery applications ! HBM ESD Protection Level of 3.5kV Typical (note 3) ! High performance trench technology for extremely low rDS(ON) ! Low profile TSSOP-8 package tmM General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.