FDW2511NZ Datasheet | Fairchild Semiconductor

FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET May 2008 FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET Features ! 7.1A, 20V rDS(ON) =0.020Ω, VGS = 4.5V rDS(ON) =0.025Ω, VGS = 2.5V ! Extended VGS range (±12 V) for battery applications ! HBM ESD Protection Level of 3.5kV Typical (note 3) ! High performance trench technology for extremely low rDS(ON) ! Low profile TSSOP-8 package tmM General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well...