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FDY101PZ - Single P-Channel MOSFET

Features

  • This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS =.
  • 2.5v. IGN.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDY101PZ Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET June 2024 FDY101PZ Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET General Description Features This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = – 2.5v. IGN Applications ES • Li-Ion Battery Pack • – 150 mA, – 20 V RDS(ON) = 8 Ω @ VGS = – 4.5 V RDS(ON) = 12 Ω @ VGS = – 2.
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