Datasheet Details
| Part number | FDY102PZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 231.31 KB |
| Description | MOSFET |
| Datasheet | FDY102PZ-FairchildSemiconductor.pdf |
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Overview: FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench® MOSFET FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench® MOSFET April 2014 –20 V, –0.83 A, 0.
| Part number | FDY102PZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 231.31 KB |
| Description | MOSFET |
| Datasheet | FDY102PZ-FairchildSemiconductor.pdf |
|
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|
Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A Max rDS(on) = 0.7 Ω at VGS = –2.5 V, ID = –0.70 A Max rDS(on) = 1.2 Ω at VGS = –1.8 V, ID = –0.43 A Max rDS(on) = 1.8 Ω at VGS = –1.5 V, ID = –0.36 A HBM ESD protection level = 1400 V (Note 3) RoHS Compliant This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(on)@VGS = –1.5 V.
Application Li-Ion Battery Pack S G D SC89-3 G1 S2 3D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Charact
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