FDY302NZ mosfet equivalent, single n-channel 2.5v specified powertrench mosfet.
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5V.
IGN Applications ES
ES
* Li-Ion Battery Pack
* 600 mA, 20 V RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 500 mΩ @ VGS = 2.5 V
* ESD.
Features
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5V.
IGN Applications ES
* Li-Ion Battery Pack
* 600 mA, 20 V RDS(ON) = 300 mΩ @ VGS = 4.
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