FDZ209N mosfet equivalent, 60v n-channel powertrench bga mosfet.
* 4 A, 60 V. RDS(ON) = 80 mΩ @ VGS = 5 V
* Occupies only 5 mm2 of PCB area: only 55% of the area of SSOT-6
* Ultra-thin package: less than 0.80 mm height whe.
* Solenoid Drivers
D S
D S S D
D S S D
D
Index slot
Index slot
G D
G
Bottom
Top
TA=25oC unless otherwise no.
Combining Fairchild’s advanced PowerTrench process with state-of-the-art BGA packaging, the FDZ209N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent th.
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