FDZ208P
Overview
Combining Fairchild’s advanced 30 Volt P-Channel Trench II Process with ± 25 Volts Vgs. Max Gate Rating for the ultimate low Rds Battery Protection MOSFET.
- -12.5 A, -30 V. RDS(ON) = 10.5 mΩ @ VGS = -10 V RDS(ON) = 16.5 mΩ @ VGS = -4.5 V
- Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8
- Ultra-thin package: less than 0.80 mm height when mounted to PCB
- 3.5 x 4 mm2 footprint
- High power and current handling capability
