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FDZ291P Key Features

  • 4.6 A, -20 V RDS(ON) = 40 mΩ @ VGS = -4.5 V RDS(ON) = 60 mΩ @ VGS = -2.5 V RDS(ON) = 160 mΩ @ VGS = -1.5 V
  • Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6
  • Ultra-thin package: less than 0.85 mm height when mounted to PCB
  • Outstanding thermal transfer characteristics: 4 times better than SSOT-6
  • Ultra-low Qg x RDS(ON) figure-of-merit
  • High power and current handling capability

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FDZ291P Description

bining Fairchild’s advanced 1.5V specified PowerTrench process with state of the art BGA packaging, the FDZ291P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON).