FDZ291P Datasheet P-Channel 1.5 V Specified PowerTrench BGA MOSFET

Manufacturer: Fairchild (now onsemi)

FDZ291P p-channel 1.5 v specified powertrench bga mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FDZ291P
Manufacturer	Fairchild (now onsemi)
File Size	246.72 KB
Description	P-Channel 1.5 V Specified PowerTrench BGA MOSFET
Download	FDZ291P Download (PDF)

General Description

Combining Fairchild’s advanced 1.5V specified PowerTrench process with state of the art BGA packaging, the FDZ291P minimizes both PCB space and RDS(ON).

This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON).

Overview

FDZ291P P-Channel 1.5 V Specified PowerTrench® BGA MOSFET February 2006 FDZ291P P-Channel 1.

Key Features

4.6 A,.
20 V RDS(ON) = 40 mΩ @ VGS =.
4.5 V RDS(ON) = 60 mΩ @ VGS =.
2.5 V RDS(ON) = 160 mΩ @ VGS =.
1.5 V.
Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6.
Ultra-thin package: less than 0.85 mm height when mounted to PCB.
Outstanding thermal transfer characteristics: 4 times better than SSOT-6.
Ultra-low Qg x RDS(ON) figure-of-merit.
High power and current handling capabili.

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