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FDZ291P Datasheet, Fairchild Semiconductor

FDZ291P Datasheet, Fairchild Semiconductor

FDZ291P

datasheet Download (Size : 246.72KB)

FDZ291P Datasheet

FDZ291P mosfet equivalent, p-channel 1.5 v specified powertrench bga mosfet.

FDZ291P

datasheet Download (Size : 246.72KB)

FDZ291P Datasheet

Features and benefits


*
  –4.6 A,
  –20 V RDS(ON) = 40 mΩ @ VGS =
  –4.5 V RDS(ON) = 60 mΩ @ VGS =
  –2.5 V RDS(ON) = 160 mΩ @ VGS =.

Application


* Battery management
* Load switch
* Battery protection GATE G D Bottom Top TA=25 C unless otherwise no.

Description

Combining Fairchild’s advanced 1.5V specified PowerTrench process with state of the art BGA packaging, the FDZ291P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combi.

Image gallery

FDZ291P Page 1 FDZ291P Page 2 FDZ291P Page 3

TAGS

FDZ291P
P-Channel
1.5
Specified
PowerTrench
BGA
MOSFET
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

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