FQA7N90 Datasheet (Fairchild Semiconductor)

FQA7N90 Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQA7N90 Features

* 7.4A, 900V, RDS(on) = 1.55Ω @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !

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* G! G DS TO-3P FQA Series ! S Absolute Maximu

FQA7N90, 900V N-Channel MOSFET - Fairchild Semiconductor

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FQA7N90 Description