Part number:
FQA7N60
Manufacturer:
Fairchild Semiconductor
File Size:
581.26 KB
Description:
600v n-channel mosfet.
* 7.7A, 600V, RDS(on) = 1.0Ω @VGS = 10 V Low gate charge ( typical 29 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! ! " " " G DS TO-3P FQA Series ! S Absolute Maximum Ratings S
FQA7N60
Fairchild Semiconductor
581.26 KB
600v n-channel mosfet.
📁 Related Datasheet
FQA7N65C - 650V N-Channel MOSFET
(Fairchild Semiconductor)
FQA7N65C 650V N-Channel MOSFET
FQA7N65C
650V N-Channel MOSFET
Features
• 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V • Low gate charge ( typical 28 nC) • Lo.
FQA7N80 - 800V N-Channel MOSFET
(Fairchild Semiconductor)
QFET
$ $ $ $ $ $ % &' ())* + , - .Ω /* , -) * 0 1 2)
3 0 1 -4.
FQA7N80C - 800V N-Channel MOSFET
(Fairchild Semiconductor)
FQA7N80C 800V N-Channel MOSFET
September 2006
QFET
FQA7N80C
800V N-Channel MOSFET
Features
• • • • • • 7.0A, 800V, RDS(on) = 1.9Ω @VGS = 10 V Low ga.
FQA7N80C_F109 - N-Channel MOSFET
(Fairchild Semiconductor)
FQA7N80C_F109 — N-Channel QFET® MOSFET
FQA7N80C_F109
N-Channel QFET® MOSFET
800 V, 7 A, 1.9 Ω Features
• 7.0 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS =.
FQA7N90 - 900V N-Channel MOSFET
(Fairchild Semiconductor)
FQA7N90
March 2001
QFET
FQA7N90
900V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produc.
FQA7N90M - 900V N-Channel MOSFET
(Fairchild Semiconductor)
FQA7N90M
January 2002
QFET
FQA7N90M
900V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are pr.
FQA70N08 - 80V N-Channel MOSFET
(Fairchild Semiconductor)
FQA70N08
August 2000
QFET
FQA70N08
80V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are prod.
FQA70N10 - 100V N-Channel MOSFET
(Fairchild Semiconductor)
FQA70N10
August 2000
QFET
FQA70N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are pro.
