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FQA7N80C_F109

N-Channel MOSFET

FQA7N80C_F109 Features

* 7.0 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.5 A

* Low Gate Charge (Typ. 27nC)

* Low Crss (Typ. 10pF)

* 100% Avalanche Tested

* RoHS Compliant May 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semicon

FQA7N80C_F109 General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQA7N80C_F109 Datasheet (2.02 MB)

Preview of FQA7N80C_F109 PDF

Datasheet Details

Part number:

FQA7N80C_F109

Manufacturer:

Fairchild Semiconductor

File Size:

2.02 MB

Description:

N-channel mosfet.

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FQA7N80C_F109 N-Channel MOSFET Fairchild Semiconductor

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