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* -38A, -60V, RDS(on) = 0.026Ω @VGS = -10 V Low gate charge ( typical 84 nC) Low Crss ( typical 320 pF) Fast switching 100% avalan.

such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operate.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQAF40N25

FQAF44N08

FQAF44N10

FQAF48N20

FQAF10N80

FQAF11N40

FQAF11N90

FQAF11N90C

FQAF12N60

FQAF12P20

FQAF13N50

FQAF13N80

FQAF14N30