FQB11P06 mosfet equivalent, 60v p-channel mosfet.
* -11.4 A, -60 V, RDS(on) = 175 mΩ (Max.) @ VGS = -10 V, ID = -5.7 A
* Low Gate Charge (Typ. 13 nC)
* Low Crss (Typ. 45 pF)
* 100% Avalanche Tested
* .
Features
* -11.4 A, -60 V, RDS(on) = 175 mΩ (Max.) @ VGS = -10 V, ID = -5.7 A
* Low Gate Charge (Typ. 13 nC)
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This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.
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