FQB13N10 Datasheet (Fairchild Semiconductor)

FQB13N10 - 100V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse

FQB13N10 Features

* 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V

* Low gate charge ( typical 12 nC)

* Low Crss ( typical 20 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* 175°C maximum junction temperature rating D GS D2-PAK FQB Series

FQB13N10 Datasheet - Fairchild Semiconductor

FQB13N10 - 100V N-Channel MOSFET

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