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FQB13N06

60V N-Channel MOSFET

FQB13N06 Features

* 13A, 60V, RDS(on) = 0.135Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 15 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " "

FQB13N06 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQB13N06 Datasheet (672.55 KB)

Preview of FQB13N06 PDF

Datasheet Details

Part number:

FQB13N06

Manufacturer:

Fairchild Semiconductor

File Size:

672.55 KB

Description:

60v n-channel mosfet.

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FQB13N06 60V N-Channel MOSFET Fairchild Semiconductor

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