FQB13N10 100V N-Channel MOSFET

Fairchild Semiconductor

FQB13N10 Description

FQB13N10 / FQI13N10 FQB13N10 / FQI13N10 100V N-Channel MOSFET January 2001 QFETTM General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQB13N10 Features

* 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V
* Low gate charge ( typical 12 nC)
* Low Crss ( typical 20 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating D GS D2-PAK FQB Series

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Datasheet Details

Part number: FQB13N10
Manufacturer: Fairchild Semiconductor
File Size: 627.51 KB
Datasheet: FQB13N10_FairchildSemiconductor.pdf
Description: 100V N-Channel MOSFET

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100V N-Channel MOSFET Fairchild Semiconductor

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