FQB13N50C Datasheet - Fairchild Semiconductor

FQB13N50C 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQB13N50C Features

* 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V

* Low gate charge ( typical 43nC)

* Low Crss ( typical 20pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* RoHS Compliant D GS D2-PAK FQB Series GDS I2-PAK FQI Series D !

FQB13N50C_FairchildSemiconductor.pdf

FQB13N50C Datasheet Preview — Preview of FQB13N50C PDF

Datasheet Details

Part number:

FQB13N50C

Manufacturer:

Fairchild Semiconductor

File Size:

967.87 KB

Description:

500v n-channel mosfet.

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FQB13N50C FQB13N50C 500V N-Channel MOSFET Fairchild Semiconductor

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