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FQB13N50 Datasheet - Fairchild Semiconductor

FQB13N50 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the .

FQB13N50 Features

* 12.5A, 500V. RDS(on) = 0.43Ω @VGS = 10 V Low gate charge ( typical 45 nC). Low Crss ( typical 25 pF). Fast switching. 100% avalanche tested. Improved dv/dt capability. D !

* ◀ ▲

* G S G! D2-PAK FQB Series G D S I2-PAK

FQB13N50_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQB13N50

Manufacturer:

Fairchild Semiconductor

File Size:

624.31 KB

Description:

500v n-channel mosfet.

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FQB13N50 FQB13N50 500V N-Channel MOSFET Fairchild Semiconductor

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