FQB13N50 500V N-Channel MOSFET

Fairchild Semiconductor

Description

FQB13N50 / FQI13N50 March 2001 QFET FQB13N50 / FQI13N50 500V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQB13N50
Manufacturer: Fairchild Semiconductor
File Size: 624.31 KB
Datasheet: FQB13N50_FairchildSemiconductor.pdf
Description: 500V N-Channel MOSFET

Features

* 12.5A, 500V. RDS(on) = 0.43Ω @VGS = 10 V Low gate charge ( typical 45 nC). Low Crss ( typical 25 pF). Fast switching. 100% avalanche tested. Improved dv/dt capability. D !
* ◀ ▲
* G S G! D2-PAK FQB Series G D S I2-PAK

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FQB13N50 500V N-Channel MOSFET Fairchild Semiconductor

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