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* 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 8.7 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanc.

such as high efficiency switching DC/DC converters, and DC motor control. D TM Features
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These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

FQB13N10

FQB13N06

FQB13N06L

FQB13N50

FQB13N50C

FQB10N20

FQB10N20C

FQB10N20L

FQB10N50CF

FQB10N60C

FQB11N40

FQB11N40C

FQB11P06