FQB13N50 mosfet equivalent, 500v n-channel mosfet.
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* 12.5A, 500V. RDS(on) = 0.43Ω @VGS = 10 V Low gate charge ( typical 45 nC). Low Crss ( typical 25 pF). Fast switching. 100% avalanche t.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.
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