FQB13N50C mosfet equivalent, 500v n-channel mosfet.
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* 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V Low gate charge ( typical 43nC) Low Crss ( typical 20pF) Fast switching 100% avalanche tested I.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.
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