Datasheet4U Logo Datasheet4U.com

FQB13N50C - 500V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V.
  • Low gate charge ( typical 43nC).
  • Low Crss ( typical 20pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS Compliant D GS D2-PAK FQB Series GDS I2-PAK FQI Series D ! " !" G! " " ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (.

📥 Download Datasheet

Datasheet preview – FQB13N50C

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FQB13N50C/FQI13N50C FQB13N50C/FQI13N50C 500V N-Channel MOSFET October 2008 QFET® General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features • 13A, 500V, RDS(on) = 0.
Published: |